These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products. Sold in a package of 5. Retails for $7.70
55A, 60V, RDS(on) = 0.020Ω @VGS = 10 V
Low gate charge (typical 35 nC)
Low Crss (typical 85 pF)
100% avalanche tested
Improved dv/dt capability
175°C maximum junction temperature rating
TO-220 package. Manufactured by Fairchild.