The KM416S1120DT-G10 is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.
Features:
3.3V power supply
LVTTL compatible with multiplexed address
Dual banks operation
MRS cycle with address key programs
All inputs are sampled at the positive going edge of the system clock
Burst Read Single-bit Write operation
DQM for masking
Auto & self refresh
15.6us refresh duty cycle (2K/32ms)
Datasheet Available:Samsung KM416S1120DT-G10
TSOP 50 package. Manufactured by Samsung.
A20583
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