MBRA210LT3 SMD 10V 2A Schottky Power Rectifier
This device employs the Schottky Barrier principle in a metal-to-silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and polarity protection diodes. Typical applications are AC-DC and DC-DC converters, reverse battery protection, and “Oring” of multiple supply voltages and any other application where performance and size are critical.
Ultra Low VF
Highly Stable Oxide Passivated Junction
Guardring for Over-Voltage Protection
Optimized for Low Forward Voltage
Datasheet Available:On Semi MBRA210LT3
Case 403D SMA plastic package. Manufactured by On Semi.