This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V).
–5.3 A, –30 V
RDS(ON) = 50 mW @ VGS = –10 V
RDS(ON) = 80 mW @ VGS = –4.5 V
Low gate charge
Fast switching speed
High performance trench technology for extremely low RDS(ON)
High power and current handling capability
Datasheet Available:Fairchild FDS9435A
SOIC 8 package. Manufactured by Fairchild.