These are N-Channel enhancement mode silicon gate power field effect transistors with formed leads. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.
rDS(ON) = 0.077Ω
Single Pulse Avalanche Energy Rated
Nanosecond Switching Speeds
Linear Transfer Characteristics
High Input Impedance
TO-220AB package. Manufactured by International Rectifier. Sold in a package of 10.